180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm

Hill, R.J.W., Moran, D.A.J., Li, X. , Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M. and Thayne, I.G. (2007) 180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm. Electronics Letters, 43, pp. 543-545. (doi:10.1049/el:20070427)

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Abstract

Abstract: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Dr David
Authors: Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Droopad, R., Passlack, M., and Thayne, I.G.
Subjects:Q Science > QC Physics
T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X
Copyright Holders:Copyright © 2007 IEEE
First Published:First published in Electronics Letters 43:543-545
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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