1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm

Hill, R.J.W. et al. (2008) 1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm. Electronics Letters, 44, pp. 498-500. (doi:10.1049/el:20080470)

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Publisher's URL: http://dx.doi.org/10.1049/el:20080470

Abstract

The first demonstration of implant-free, flatband-mode In<sub>0.75</sub>Ga<sub>0.25</sub>As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup>2</sup>/Vs and sheet carrier concentration of 3.3×10<sup>12</sup> cm<sup>-22</sup>, utilise a Pt gate, a high-k dielectric (k≈20), and a δ-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (I<sub>d,sat</sub>) of 933 μA/μm, extrinsic transconductance (g<sub>m</sub>) of 737 μS/μm, gate leakage (I<sub>g</sub>) of 40 pA, and on-resistance (R<sub>on</sub>) of 555 Ωμm. The g<sub>m</sub> and R<sub>on</sub> figures of merit are the best reported to date for any III-V MOSFET.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Asenov, Professor Asen and Moran, Dr David
Authors: Hill, R.J.W., Droopad, R., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Ignatova, O., Asenov, A., Rajagopalan, K., Fejes, P., Thayne, I.G., and Passlack, M.
Subjects:Q Science > QC Physics
T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X
Copyright Holders:Copyright © 2008 Institution of Engineering and Technology
First Published:First published in Electronics Letters 44:498-500
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
452481Silicon compatible process modules for III-V electronic devices.Iain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/F002610/1ENG - ENGINEERING ELECTRONICS & NANO ENG