A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs

Lok, L.B., Hwang, C.J., Chong, H.M.H., Thayne, I.G. and Elgaid, K. (2009) A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. In: European Microwave Conference, Rome, Italy, 29 Sept - 1 Oct 2009, pp. 1251-1254.

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Abstract

We present design and measurement results for the first W-band (75-110GHz) monolithic vector modulator employing tandem couplers and 50nm GaAs metamorphic high electron mobility transistors (MHEMT). Different gate-width MHEMT devices in the cold configuration were fabricated and characterized up to 110GHz. The 2x50 mu m gate geometry device was selected as the best compromise between low off-state capacitive reactance and on-state resistance. On-after measurement results revealed less than 15dB insertion loss and better than 27dB of isolation across the full 75-110GHz band.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lok, Dr Lai Bun and Thayne, Professor Iain and Chong, Dr Harold and Elgaid, Dr Khaled
Authors: Lok, L.B., Hwang, C.J., Chong, H.M.H., Thayne, I.G., and Elgaid, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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