Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G. and Watling, J.R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, 53(12), pp. 1252-1256. (doi: 10.1016/j.sse.2009.09.014)
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Publisher's URL: http://dx.doi.org/10.1016/j.sse.2009.09.014
Abstract
The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is re. viewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy |
| Authors: | Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G., and Watling, J.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Solid-State Electronics |
| Publisher: | Elsevier |
| ISSN: | 0038-1101 |
| ISSN (Online): | 1879-2405 |
| Published Online: | 14 October 2009 |
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