Improved effective mobility extraction in MOSFETs

Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G. and Watling, J.R. (2009) Improved effective mobility extraction in MOSFETs. Solid-State Electronics, 53(12), pp. 1252-1256. (doi:10.1016/j.sse.2009.09.014)

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Publisher's URL: http://dx.doi.org/10.1016/j.sse.2009.09.014

Abstract

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is re. viewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy
Authors: Thomas, S.M., Whall, T.E., Parker, E.H.C., Leadley, D.R., Lander, R.J.P., Vellianitis, G., and Watling, J.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
Publisher:Elsevier
ISSN:0038-1101
ISSN (Online):1879-2405
Published Online:14 October 2009

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
370511The impact of Interface Roughness & Self-Heating on the performance of Nano-Scale MOSFETsJeremy WatlingEngineering & Physical Sciences Research Council (EPSRC)GR/S97194/01Electronic and Nanoscale Engineering