Aldegunde, M., Seoane, N., Garcia-Loureiro, A.J. and Kalna, K. (2010) Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Computer Physics Communications, 181(1), pp. 24-34. (doi: 10.1016/j.cpc.2009.08.013)
Full text not currently available from Enlighten.
Abstract
When using an unstructured mesh for device geometry, the ensemble Monte Carlo simulations of semiconductor devices may be affected by unwanted self-forces resulting from the particle-mesh coupling. We report on the progress in minimisation of the self-forces on arbitrary meshes by showing that they can be greatly reduced on a finite element mesh with proper interpolation functions. The developed methodology is included into a self-consistent finite element 3D Monte Carlo device simulator. Minimising of the self-forces using the proper interpolation functions is tested by simulating the electron transport in a 10 nm gate length, 6.1 nm body thick, double gate metal-oxide-semiconductor field-effect transistor (MOSFET). We demonstrate the reduction in the self-force and illustrate the practical distinction by showing I-V characteristics for the device.
Item Type: | Articles |
---|---|
Keywords: | device devices ELECTRON-TRANSPORT Finite element method Monte Carlo simulation MOSFET MOSFETS Particle-mesh coupling Self-forces semiconductor Semiconductor devices simulation transistor TRANSPORT |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Kalna, Dr Karol |
Authors: | Aldegunde, M., Seoane, N., Garcia-Loureiro, A.J., and Kalna, K. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Computer Physics Communications |
ISSN: | 0010-4655 |
University Staff: Request a correction | Enlighten Editors: Update this record