Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl-2/Ar/N-2 chemistry

Dylewicz, R., De La Rue, R.M. , Wasielewski, R., Mazur, P., Mezosi, G. and Bryce, A.C. (2010) Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl-2/Ar/N-2 chemistry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(4), pp. 882-890. (doi:10.1116/1.3466811)

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Publisher's URL: http://dx.doi.org/10.1116/1.3466811

Abstract

Inductively coupled plasma dry etching for the fabrication of fine-pitch patterns in a wide range of InP-based materials has been developed. The effect of plasma chemistry (the N-2 content in the total Cl-2/Ar/N-2 gas mixture) on the degree of undercut in the sidewall profile and surface morphology has been studied. Optimization of the etch process conditions produces strong passivation effects on the sidewalls, together with a highly anisotropic process, while still maintaining a good etch rate (560-730 nm/min). Single-step etching using hydrogen silsesquioxane as a resist/hard-mask resulted in high aspect ratio features being obtained (up to 30:1). Low plasma excitation power (inductively coupled plasma machine operating power of 400 W) and moderate ion energy (rf power of 120 W) were utilized to minimize etch-induced damage and provide low scattering losses. Low-loss (0.3 dB/mm) optical ridge waveguides and high reflectivity and high-wavelength selectivity (Delta lambda=2 nm) results with 236 nm period sidewall gratings were demonstrated experimentally.

Item Type:Articles
Keywords:BRAGG GRATINGS CL-2 dry etching energy excitation fabrication gas gratings H-2 heterostructures HSQ INP LASER optical passivation Photonic crystals plasma ratio reflectivity SMOOTH
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mezosi, Mr Gabor and De La Rue, Professor Richard and Dylewicz, Dr Rafal and Bryce, Prof Ann
Authors: Dylewicz, R., De La Rue, R.M., Wasielewski, R., Mazur, P., Mezosi, G., and Bryce, A.C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:1071-1023
ISSN (Online):1520-8567
Published Online:30 July 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering