Nanofabrication of gallium nitride photonic crystal light-emitting diodes

Khokhar, A.Z. et al. (2010) Nanofabrication of gallium nitride photonic crystal light-emitting diodes. Microelectronic Engineering, 87(11), pp. 2200-2207. (doi: 10.1016/j.mee.2010.02.003)

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We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted light. This paper describes three nano lithography techniques for patterning photonic crystal structures on the emitting faces of LEDs: direct-write electron beam lithography, hard stamp nanoimprint lithography and soft-stamp nanoimprint lithography with disposable embossing masters. In each case we describe variations on the technique as well as its advantages and disadvantages. Complete process details have been given for all three techniques. In addition, we show how high performance GaN dry etch techniques, coupled with optical process monitoring can transfer resist patterns into underlying GaN material with high fidelity.

Item Type:Articles
Keywords:device devices Electron beam electron beam lithography fabrication GaN dry-etching HIGH EXTRACTION EFFICIENCY INDUCTIVELY-COUPLED PLASMA LEDS light Light-emitting diodes lithography N-FACE GAN nanofabrication Nanolithography optical OUTPUT performance Photonic crystals resist technologies technology UV-NANOIMPRINT LITHOGRAPHY
Glasgow Author(s) Enlighten ID:Johnson, Dr Nigel and Khokhar, Dr Ali and De La Rue, Professor Richard and Rahman, Dr Faiz and Macintyre, Dr Douglas
Authors: Khokhar, A.Z., Parsons, K., Hubbard, G., Rahman, F., Macintyre, D.S., Xiong, C., Massoubre, D., Gong, Z., Johnson, N.P., De La Rue, R.M., Watson, I.A., Gu, E., Dawson, M.D., Abbott, S.J., Charlton, M.D.B., and Tillin, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
Publisher:Elsevier BV, North-Holland
ISSN (Online):1873-5568
Published Online:11 February 2010

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