Fu, K.-M.C., Santori, C., Stanley, C.R., Holland, M.C. and Yamamoto, Y. (2005) Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor. Physical Review Letters, 95, (doi: 10.1103/PhysRevLett.95.187405)
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Publisher's URL: http://dx.doi.org/10.1103/PhysRevLett.95.187405
Abstract
In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Stanley, Professor Colin |
Authors: | Fu, K.-M.C., Santori, C., Stanley, C.R., Holland, M.C., and Yamamoto, Y. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Centres > Glasgow Materials Research Initiative |
Journal Name: | Physical Review Letters |
Publisher: | American Physical Society |
ISSN: | 0031-9007 |
ISSN (Online): | 1079-7114 |
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