Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor

Fu, K.-M.C., Santori, C., Stanley, C.R., Holland, M.C. and Yamamoto, Y. (2005) Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor. Physical Review Letters, 95, (doi: 10.1103/PhysRevLett.95.187405)

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Publisher's URL: http://dx.doi.org/10.1103/PhysRevLett.95.187405

Abstract

In high-purity n-type GaAs under a strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor-bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence, indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various electromagnetically induced transparency type experiments.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin
Authors: Fu, K.-M.C., Santori, C., Stanley, C.R., Holland, M.C., and Yamamoto, Y.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:Physical Review Letters
Publisher:American Physical Society
ISSN:0031-9007
ISSN (Online):1079-7114

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