Planar Gunn-type triode oscillator at 83 GHz

Khalid, A.H. , Dunn, G.M., Pilgrim, N., Stanley, C.R., Thayne, I.G., Holland, M. and Cumming, D.R.S. (2007) Planar Gunn-type triode oscillator at 83 GHz. Electronics Letters, 43(15), pp. 837-838. (doi:10.1049/el:20071099)

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Abstract

A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography. Oscillation occurs at 83 GHz for a 0.5 µm gate length device with a 1.3 µm gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Khalid, Dr Ata and Cumming, Professor David and Stanley, Professor Colin
Authors: Khalid, A.H., Dunn, G.M., Pilgrim, N., Stanley, C.R., Thayne, I.G., Holland, M., and Cumming, D.R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:Electronics Letters
ISSN:0013-5194
ISSN (Online):1350-911X

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