GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

Holland, M., Stanley, C.R., Reid, W., Thayne, I. , Paterson, G.W. , Long, A.R., Longo, P., Scott, J. , Craven, A.J. and Gregory, R. (2007) GdGaO: a gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), pp. 1024-1028. (doi:10.1116/1.2738480)

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Publisher's URL: http://dx.doi.org/10.1116/1.2738480

Abstract

Gd<sub><i>x</i></sub>Ga<sub>0.4-<i>x</i></sub>O<sub>0.6</sub>/Ga<sub>2</sub>O<sub>3</sub>dielectric stacks have been grown on (001)GaAs to form a III-V/oxide with a low interface state density and a high conduction band offset. Photoluminescence is used to compare the stacks with low interface state density Ga<sub>2</sub>O<sub>3</sub>-GaAs layers. Rutherford backscattering and electron energy loss spectroscopy are used to investigate the Gd compositional variation with depth and this is related to the interface state density. The effect of Gd flux and atomic oxygen on the growth rate is reported. The leakage current through Gd<sub><i>x</i></sub>Ga<sub>0.4-<i>x</i></sub>O<sub>0.6</sub>/Ga<sub>2</sub>O<sub>3</sub> stacks is compared with ones using only Ga<sub>2</sub>O<sub>3</sub> as the oxide.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Scott, Dr Jamie and Thayne, Professor Iain and Stanley, Professor Colin and Reid, Mr William and Longo, Dr Paolo and Long, Professor Andrew and Craven, Professor Alan and Paterson, Dr Gary and Holland, Dr Martin
Authors: Holland, M., Stanley, C.R., Reid, W., Thayne, I., Paterson, G.W., Long, A.R., Longo, P., Scott, J., Craven, A.J., and Gregory, R.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
University Centres > Glasgow Materials Research Initiative
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Publisher:American Institute of Physics
ISSN:1071-1023
ISSN (Online):1520-8567
Published Online:31 May 2007

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
358573Sub 100nm 111-V MOSFET's for Digital ApplicationsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)GR/S61218/01Electronic and Nanoscale Engineering