50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S. and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, Princeton, New Jersey, USA, 7-11 May 2006, pp. 181-184. ISBN 0780395581 (doi:10.1109/ICIPRM.2006.1634143)

[img]
Preview
Text
Moran4065.pdf

445kB

Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2006.1634143

Abstract

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f<sub>T</sub> of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 ΜW) radio transceivers for autonomous distributed sensor network applications.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Stanley, Professor Colin and Thayne, Professor Iain and Moran, Dr David and Elgaid, Dr Khaled
Authors: Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S., and Stanley, C.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:0780395581
Copyright Holders:Copyright © 2006 IEEE
First Published:First published in 2006 International Conference on Indium Phosphide and Related Materials
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
292091metamorphic GaAs HEMTs for High Bandwidth Wireless Communication ApplicationsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)GR/A10994/01Electronic and Nanoscale Engineering