50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications

Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S. and Stanley, C. (2006) 50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. In: 2006 International Conference on Indium Phosphide and Related Materials, Princeton, New Jersey, USA, 7-11 May 2006, pp. 181-184. ISBN 0780395581 (doi: 10.1109/ICIPRM.2006.1634143)

Abstract

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f_T of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 ΜW) radio transceivers for autonomous distributed sensor network applications.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thoms, Dr Stephen and Stanley, Professor Colin and Thayne, Prof Iain and Moran, Professor David and Elgaid, Dr Khaled
• Authors: Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Thoms, S., and Stanley, C.
• Subjects: T Technology > T Technology (General)
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: IEEE
• ISBN: 0780395581
• Copyright Holders: Copyright © 2006 IEEE
• First Published: First published in 2006 International Conference on Indium Phosphide and Related Materials
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
29209	1	metamorphic GaAs HEMTs for High Bandwidth Wireless Communication Applications	Iain Thayne	Engineering & Physical Sciences Research Council (EPSRC)	GR/A10994/01	Electronic and Nanoscale Engineering