Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications

Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I.G. (2005) Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications. In: IEEE International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, Scotland, 8-12 May 2005, pp. 141-143. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517439)

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Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2005.1517439

Abstract

The 50 nm m-HEMT exhibits extremely high f<sub>T</sub>, of 440GHz, low F<sub>min</sub> of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Moran, Dr David and Elgaid, Dr Khaled
Authors: Elgaid, K., Moran, D., McLelland, H., Holland, M., and Thayne, I.G.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISSN:1092-8669
ISBN:0780388917
Copyright Holders:Copyright © 2005 IEEE
First Published:First published in 2005 IEEE International Conference on Indium Phosphide and Related Materials
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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