Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S. and Stanley, C. (2004) Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. In: 4th IEEE Conference on Nanotechnology 2004, Munich, Germany, 16-19 August 2004, pp. 95-97. ISBN 0780385365 (doi: 10.1109/NANO.2004.1392261)
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Publisher's URL: http://dx.doi.org/10.1109/NANO.2004.1392261
Abstract
In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of a range of lattice matched and pseudomorphic InP HEMTs and GaAs metamorphic HEMTs with functional yields in excess of 95%, threshold voltage uniformity of 5 mV, DC transconductance of up to 1600 mS/mm and f/sub T/ of up to 480 GHz. These technologies and device demonstrators are key to enabling a wide range of millimeter-wave imaging and sensing applications beyond 100 GHz, particularly where array-based multi-channel solutions are required.
Item Type: | Conference Proceedings |
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Keywords: | HEMT, HEMTS, high performance, high-performance, nanofabrication, performance, technology |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Thoms, Dr Stephen and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled |
Authors: | Thayne, I., Cao, X., Moran, D.A.J., Boyd, E., Elgaid, K., McLelland, H., Holland, M., Thoms, S., and Stanley, C. |
Subjects: | T Technology > T Technology (General) |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | IEEE |
ISBN: | 0780385365 |
Copyright Holders: | Copyright © 2004 IEEE |
First Published: | First published in 4th IEEE Conference on Nanotechnology 2004 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher. |
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