Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII

Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S. and Thayne, I.G. (2004) Fabrication of 30nm T-gate high electron mobility transistors using a bi-Layer of PMMA and UVIII. In: 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices, Brisbane, Australia, 8-10 December 2004, pp. 25-28. ISBN 0780388208 (doi:10.1109/COMMAD.2004.1577483)

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Publisher's URL: http://dx.doi.org/10.1109/COMMAD.2004.1577483

Abstract

This work reports on the development and fabrication of High Electron Mobility Transistors with a gate length of less than 30nm. The T-shaped gates were realized using a two-stage "bi-lithography" process that creates a T-shaped image in a bilayer of PMMA and UVIII. This is then transferred into SiO2 gate support layer by a low damage dry-etch process. This method enables the fabrication of mechanically robust, ultra short T-gates to be realised.

Item Type:Conference Proceedings
Keywords:HEMT, T-gate, bi-layer, UVIII, lithography.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and McLelland, Mrs Helen and Thoms, Dr Stephen and Moran, Dr David
Authors: Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S., and Thayne, I.G.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE
ISBN:0780388208
Copyright Holders:Copyright © 2004 IEEE
First Published:First published in 2004 IEEE Conference on Optoelectronic and Microelectronic Materials and Devices
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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