High mobility III-V MOSFETs for RF and digital applications

Passlack, M. et al. (2007) High mobility III-V MOSFETs for RF and digital applications. In: IEEE International Electron Devices Meeting (IEDM 2007), Washington DC, USA, 10-12 December 2007, pp. 621-624. ISBN 9781424415083 (doi:10.1109/IEDM.2007.4419016)

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Publisher's URL: http://dx.doi.org/10.1109/IEDM.2007.4419016

Abstract

Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially suitable for RF power amplification, switching, and front-end integration in mobile and wireless applications while MOSFETs with high indium content channels are of interest for future CMOS applications.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Asenov, Professor Asen and Kalna, Dr Karol and Moran, Dr David
Authors: Passlack, M., Zurcher, P., Rajagopalan, K., Droopad, R., Abrokwah, J., Tutt, M., Park, Y.-B., Johnson, E., Hartin, O., Zlotnicka, A., Fejes, P., Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Kalna, K., and Thayne, I.G.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Publisher:IEEE
ISBN:9781424415083
Copyright Holders:Copyright © 2007 IEEE
First Published:First published in IEEE International Electron Devices Meeting (IEDM 2007)
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
358573Sub 100nm 111-V MOSFET's for Digital ApplicationsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)GR/S61218/01Electronic and Nanoscale Engineering