Trainer, M. (2003) The effects of neutron transmutations on the low-temperature dielectric properties of solid tantalum capacitors. Materials Chemistry and Physics, 80(1), pp. 264-268. (doi: 10.1016/S0254-0584(02)00465-0)
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Publisher's URL: http://dx.doi.org/10.1016/S0254-0584(02)00465-0
Abstract
The method of neutron transmutation doping (NTD) was used to modify the composition of the tantalum pentoxide dielectric of commercial solid tantalum electrolytic capacitors. The dielectric properties of these isotopically engineered capacitors were measured in the temperature range 90-300 K. Neutron irradiation periods of 30 and 120 days resulted in shifts in the capacitance-temperature and dielectric loss-temperature profiles with increasing irradiation dose. The 10 microF 35 V rated tantalum capacitors showed a good radiation hardness.
| Item Type: | Articles |
|---|---|
| Additional Information: | A method for isotopically engineering the properties of electronic components |
| Keywords: | Amorphous materials, thin films, neutron transmutation doping, dielectric properties, radiation damage |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Trainer, Mr Matthew |
| Authors: | Trainer, M. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Research Group: | Physics and Astronomy |
| Journal Name: | Materials Chemistry and Physics |
| ISSN: | 0254-0584 |
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