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InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique

Moerman, I., Vanderbauwhede, W., D'Hondt, M., Van Daele, P., Demeester, P., and Hunziker, W. (1995) InGaAsP/InP strained MQW laser with integrated mode size converter using the shadow masked growth technique. In: Seventh International Conference on Indium Phosphide and Related Materials, 9-13 May 1995, Hokkaido, Japan. IEEE Computer Society, Piscataway, N.J., USA, pp. 717-720. ISBN 9780780321472

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Abstract

We have successfully integrated a mode size converter with a PBH strained MQW InGaAsP/InP laser diode using the SMG technique. The laser performance is hardly affected by the taper integration. Due to the taper, the coupling loss to a cleaved fibre is reduced from 9.3 dB for a non-tapered laser to 3.3 dB for a laser with a 200 μm taper.

Item Type:Book Section
Status:Published
Glasgow Author(s) Enlighten ID:Vanderbauwhede, Dr Wim
Authors: Moerman, I., Vanderbauwhede, W., D'Hondt, M., Van Daele, P., Demeester, P., and Hunziker, W.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Computing Science
Publisher:IEEE Computer Society

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