A planar Gunn diode operating above 100 GHz

Khalid, A.H. , Pilgrim, N.J., Dunn, G.M., Holland, M.C., Stanley, C.R., Thayne, I.G. and Cumming, D.R.S. (2007) A planar Gunn diode operating above 100 GHz. IEEE Electron Device Letters, 28(10), pp. 849-851. (doi: 10.1109/LED.2007.904218)



Publisher's URL: http://dx.doi.org/10.1109/LED.2007.904218


We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits. The material used was grown by molecular beam epitaxy, and devices were made using electron beam lithography. Since the frequency of oscillation is defined by the lithographically controlled anode-cathode distance, the technology shows great promise in fabricating single chip terahertz sources.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Khalid, Dr Ata-Ul-Habib and Cumming, Professor David and Stanley, Professor Colin
Authors: Khalid, A.H., Pilgrim, N.J., Dunn, G.M., Holland, M.C., Stanley, C.R., Thayne, I.G., and Cumming, D.R.S.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1558-0563
Copyright Holders:Copyright © 2007 Institute of Electrical and Electronics Engineers
First Published:First published in IEEE Electron Device Letters 28(10):849-851
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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