Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications

Elgaid, K., McLelland, H., Stanley, C.R. and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, Piscataway, 8-12 May 2005, pp. 523-525. ISBN 0780388917 (doi: 10.1109/ICIPRM.2005.1517548)

Abstract

We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an f/sub T/ of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Stanley, Professor Colin and Elgaid, Dr Khaled
• Authors: Elgaid, K., McLelland, H., Stanley, C.R., and Thayne, I.G.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; University Centres > Glasgow Materials Research Initiative
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 1092-8669
• ISBN: 0780388917
• Copyright Holders: Copyright © 2005 Institute of Electrical and Electronics Engineers
• First Published: First published in Proceedings : International Conference on Indium Phosphide and Related Materials 2005
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher