Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications

Elgaid, K., McLelland, H., Stanley, C.R. and Thayne, I.G. (2005) Low noise W-band MMMIC amplifier using 50 nm InP technology for millimeterwave receivers applications. In: International Conference on Indium Phosphide and Related Materials, Piscataway, 8-12 May 2005, pp. 523-525. ISBN 0780388917 (doi:10.1109/ICIPRM.2005.1517548)

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Publisher's URL: http://dx.doi.org/10.1109/ICIPRM.2005.1517548

Abstract

We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an f/sub T/ of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Elgaid, Dr Khaled
Authors: Elgaid, K., McLelland, H., Stanley, C.R., and Thayne, I.G.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1092-8669
ISBN:0780388917
Copyright Holders:Copyright © 2005 Institute of Electrical and Electronics Engineers
First Published:First published in Proceedings : International Conference on Indium Phosphide and Related Materials 2005
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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