50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz

Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R. and Thayne, I.G. (2005) 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26(11), pp. 784-786. (doi:10.1109/LED.2005.857716)

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Publisher's URL: http://dx.doi.org/10.1109/LED.2005.857716

Abstract

GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs substrate show f/sub T/ of 440 GHz, f/sub max/ of 400 GHz, a minimum noise figure of 0.7 dB and an associated gain of 13 dB at 26 GHz, the latter at a drain current of 185 mA/mm and g/sub m/ of 950 mS/mm. In addition, a noise figure of below 1.2 dB with 10.5 dB or higher associated gain at 26 GHz was demonstrated for drain currents in the range 40 to 470 mA/mm at a drain bias of 0.8 V. These devices are ideal for low noise and medium power applications at millimeter-wave frequencies.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., and Thayne, I.G.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563
Copyright Holders:Copyright © 2005 Institute of Electrical and Electronics Engineers (IEEE)
First Published:First published in IEEE Electron Device Letters 26(11):784-786
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
292091metamorphic GaAs HEMTs for High Bandwidth Wireless Communication ApplicationsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)GR/A10994/01Electronic and Nanoscale Engineering