Aleshkin, V.Y., Reggiani, L., Alkeev, N.V., Lyubchenko, V.E., Ironside, C.N., Figueiredo, J.M.L. and Stanley, C.R. (2003) Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport. Semiconductor Science and Technology, 18(6), pp. 35-38. (doi: 10.1088/0268-1242/18/6/103)
Full text not currently available from Enlighten.
Publisher's URL: http://dx.doi.org/10.1088/0268-1242/18/6/103
Abstract
Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of coherent transport regime and can occur at zero temperature as a consequence of the Pauli principle or at sufficiently high temperatures above 77 K as a consequence of a long-range Coulomb interaction. These predictions are in agreement with experimental data.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Stanley, Professor Colin |
Authors: | Aleshkin, V.Y., Reggiani, L., Alkeev, N.V., Lyubchenko, V.E., Ironside, C.N., Figueiredo, J.M.L., and Stanley, C.R. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Centres > Glasgow Materials Research Initiative |
Journal Name: | Semiconductor Science and Technology |
ISSN: | 0268-1242 |
University Staff: Request a correction | Enlighten Editors: Update this record