Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport

Aleshkin, V.Y., Reggiani, L., Alkeev, N.V., Lyubchenko, V.E., Ironside, C.N., Figueiredo, J.M.L. and Stanley, C.R. (2003) Giant suppression of shot noise in double barrier resonant diode: a signature of coherent transport. Semiconductor Science and Technology, 18(6), pp. 35-38. (doi:10.1088/0268-1242/18/6/103)

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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/18/6/103

Abstract

Shot noise suppression in double barrier resonant tunnelling diodes with a Fano factor well below the value of 0.5 is theoretically predicted. This giant suppression is found to be a signature of coherent transport regime and can occur at zero temperature as a consequence of the Pauli principle or at sufficiently high temperatures above 77 K as a consequence of a long-range Coulomb interaction. These predictions are in agreement with experimental data.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin
Authors: Aleshkin, V.Y., Reggiani, L., Alkeev, N.V., Lyubchenko, V.E., Ironside, C.N., Figueiredo, J.M.L., and Stanley, C.R.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:Semiconductor Science and Technology
ISSN:0268-1242

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