Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates

Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R. and Thayne, I.G. (2003) Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering, 67-89, pp. 769-774. (doi:10.1016/S0167-9317(03)00137-0)

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Publisher's URL: http://dx.doi.org/doi:10.1016/S0167-9317(03)00137-0

Abstract

To address the major issues of increasing device frequency performance and reducing fabrication costs of 100 nm scale gate length III–V HEMT devices, two novel technologies developed for GaAs pHEMT are reported, namely: (i) A low resistance, non-annealed Ohmic contact technology based on a thin metallisation and highly doped In0.2GaAs/GaAs cap layer which is compatible with a self-aligned gate process. (ii) A succinic acid based gate recess etch which selectively etches the In0.2GaAs/GaAs cap required for the non-annealed ohmic contact technology, stopping on a 5-nm Al0.3GaAs etch stop layer. Incorporating both of these processes, self-aligned T-gate and nanoimprinted T-gate devices have been realised. Completed self-aligned T-gate GaAs pHEMT devices of 120 nm gate length exhibited an fT and fmax of 135 and 180 GHz, respectively, while nanoimprint 120 nm GaAs pHEMT devices demonstrated excellent DC characteristics, including a transconductance of 450 mS/mm.

Item Type:Articles
Keywords:GaAs pHEMT, Nanoimprint, Ohmic contact, Self-aligned, Succinic acid.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Thayne, Professor Iain and Stanley, Professor Colin and Macintyre, Dr Douglas and Moran, Dr David and Elgaid, Dr Khaled
Authors: Moran, D., Boyd, E., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D.S., Thoms, S., Stanley, C.R., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Centres > Glasgow Materials Research Initiative
Journal Name:Microelectronic Engineering
ISSN:0167-9317

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