Si/SiGe quantum cascade superlattice designs for terahertz emission

Matmon, G. et al. (2010) Si/SiGe quantum cascade superlattice designs for terahertz emission. Journal of Applied Physics, 107(5), 053109. (doi:10.1063/1.3319653)

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Quantum cascade lasers are compact sources that have demonstrated high output powers at THz frequencies. To date all THz quantum cascade lasers have been realized in III-V materials. Results are presented from Si1−xGex quantum cascade superlattice designs emitting at around 3 THz which have been grown in two different chemical vapor deposition systems. The key to achieving successful electroluminescence at THz frequencies in a p-type system has been to strain the light-hole states to energies well above the radiative subband states. To accurately model the emission wavelengths, a 6-band k.p tool which includes the effects of non-abrupt heterointerfaces has been used to predict the characteristics of the emitters. X-ray diffraction and transmission electron microscopy have been used along with Fourier transform infrared spectroscopy to fully characterise the samples. A number of methods to improve the gain from the designs are suggested.

Item Type:Articles (Other)
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Matmon, G., Paul, D.J., Lever, L., Califano, M., Ikonic, Z., Kelsall, R.W., Zhang, J., Chrastina, D., Isella, G., von Kanel, H., Muller, E., and Neels, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Journal Abbr.:J. App. Phys.
Publisher:American Institute of Physics
ISSN (Online):1089-7550
Published Online:08 March 2010
Copyright Holders:Copyright © 2010 American Institute of Physics
First Published:First published in Journal of Applied Physics 107(5):053109
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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