Linearization of table-based MOSFET model parameters for nonlinear quantification

Abuelmaatti, A., Thayne, I.G. and Abuelma'atti, M.T. (2008) Linearization of table-based MOSFET model parameters for nonlinear quantification. In: Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference. IEEE, pp. 1608-1611. ISBN 9781424423415 (doi:10.1109/APCCAS.2008.4746343)

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This work presents a unique method to quantify the nonlinear distortion due to several nonlinear parameters in the MOSFET transistor utilizing a table-based model where each of its nonlinear parameters are individually and independently represented. The quantification method is based on a novel technique by which the nonlinearities of the nonlinear elements are removed, and then their description is switched between the nonlinear and linear representations in a superposition approach with the transistor's third-order intermodulation distortion measured every time. Quantification results confirm both the strength of the linearisation techniques and the validity of the method by which individual contribution to distortion from the transistor nonlinear elements can be quantified through nonlinear modeling. All work is carried out in Agilent Advanced Design Systems (ADS), where automation code is implemented in its Data Display Window functions

Item Type:Book Sections
Additional Information:APCCAS 2008 held in Macao, China, Nov. 30 2008-Dec. 3 2008.
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain
Authors: Abuelmaatti, A., Thayne, I.G., and Abuelma'atti, M.T.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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