Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited

Asenov, A. (2008) Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: self-consistent simulation study - Invited. In: 14th IEEE International Symposium on Asynchronous Circuits and Systems ASYNC 2008, Newcastle, UK, 7-11th April, 2008, xv.

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Item Type:Conference Proceedings
Keywords:Systems, system
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
416341Novel time resolved thermal imaging - AlGaN/GaN heterostructure field effect transistorsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/D04698X/1Electronic and Nanoscale Engineering