Impact of the Field Induced Polarization Space-Charge on the Characteristics of AlGaN/GaN HEMT: Self-Consistent Simulation Study

Balaz, D., Kalna, K., Kuball, M., Uren, M. and Asenov, A. (2008) Impact of the Field Induced Polarization Space-Charge on the Characteristics of AlGaN/GaN HEMT: Self-Consistent Simulation Study. In: International Workshop On Nitride Semiconductors, Montreux, Switzerland, Oct. 6-10, 2008, We7-C4.

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Item Type:Conference Proceedings
Additional Information:IWN 2008
Keywords:Semiconductors
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Balaz, Dr Daniel and Asenov, Professor Asen and Kalna, Dr Karol
Authors: Balaz, D., Kalna, K., Kuball, M., Uren, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
416341Novel time resolved thermal imaging - AlGaN/GaN heterostructure field effect transistorsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/D04698X/1Electronic and Nanoscale Engineering