2D/3D NEGF modeling of the impact of random dopants/dopant aggregation in silicon nano-transistors

Barker, J.R. (2008) 2D/3D NEGF modeling of the impact of random dopants/dopant aggregation in silicon nano-transistors. In: 2008 International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2008 : September 9-11, 2008, Yumoto Fujiya Hotel, Hakone, Japan. IEEE, pp. 337-340. ISBN 9781424417537

Abstract

The discrete nature of dopants becomes apparent in nano-scaled devices leading to microvariability problems which cause large fluctuations in the performance of macroscopically identical devices. Since self-averaging fails, the approach reviewed here utilises self-consistent non-equilibrium Green function modelling to evaluate the effects of discrete random dopants in source and drain non-perturbatively

• Item Type: Book Sections
• Status: Published
• Glasgow Author(s) Enlighten ID: Barker, Professor John
• Authors: Barker, J.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: IEEE
• ISBN: 9781424417537