Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H., Macintyre, D.S., Thoms, S. , Asenov, A. and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi:10.1109/SNW.2008.5418447)

Hill, R.J.W., Moran, D.A.J. , Li, X. , Zhou, H., Macintyre, D.S., Thoms, S. , Asenov, A. and Thayne, I.G. (2008) Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi:10.1109/SNW.2008.5418447)

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Abstract

There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In0.75Ga0.25As channel nMOSFETs which have highly encouraging performance metrics.

Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Dr David and Li, Dr Xu and Macintyre, Dr Douglas and Asenov, Professor Asen
Authors: Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre
Publisher:IEEE Computer Society
ISBN:9781424420711

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