SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD

Isella, G. et al. (2008) SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD. In: Proceedings of the 5th IEEE International Conference on Group IV Photonics, 17-19 Sept. 2008 , Cardiff, Wales. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424417698 (doi:10.1109/GROUP4.2008.4638086)

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Si<sub>0.5</sub>Ge<sub>0.5</sub>/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.

Item Type:Book Sections
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Isella, G., Matmon, G., Neels, A., Muller, E., Califano, M., Chrastina, D., von Kanel, H., Lever, L., Ikonic, Z., Kelsall, R.W., and Paul, D.J.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE Computer Society

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