Kamsani, N.A., Cheng, B., Roy, S. and Asenov, A. (2008) Statistical circuit simulation with supply-voltage scaling in nanometre MOSFET devices under the influence of random dopant fluctuations. In: Faible Tension Faible Consommation (FTFC) 2008, Louvain La Neuve, Belgium, 26-28 May 2008, pp. 95-99.
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Item Type: | Conference Proceedings |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen |
Authors: | Kamsani, N.A., Cheng, B., Roy, S., and Asenov, A. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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