Statistical circuit simulation with the effect of random discrete dopants in nanometer MOSFET devices

Kamsani, N.A., Cheng, B., Roy, S. and Asenov, A. (2008) Statistical circuit simulation with the effect of random discrete dopants in nanometer MOSFET devices. In: Design Automation and Test in Europe: Workshop W2, Impact of Process Variability on Design and Test, Munich, Germany, 10-14 March 2008,

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Kamsani, N.A., Cheng, B., Roy, S., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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