Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors

Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G. and Asenov, A. (2008) Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors. In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, 9-11 Sept 2008, Hakone, Japan. IEEE Computer Society: Piscataway, N.J., USA, pp. 21-24. ISBN 9781424417537 (doi:10.1109/SISPAD.2008.4648227)

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Abstract

The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary to accurately model random discrete dopant induced variability.

Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Sinnott, Professor Richard and Roy, Dr Gareth and Asenov, Professor Asen and Reid, Mr David and Roy, Professor Scott
Authors: Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Services > IT Services > E-Science
Publisher:IEEE Computer Society
ISBN:9781424417537

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