Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G. and Asenov, A. (2008) Prediction of random dopant induced threshold voltage fluctuations in NanoCMOS transistors. In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, 9-11 Sept 2008, Hakone, Japan. IEEE Computer Society: Piscataway, N.J., USA, pp. 21-24. ISBN 9781424417537 (doi: 10.1109/SISPAD.2008.4648227)
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Abstract
The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary to accurately model random discrete dopant induced variability.
Item Type: | Book Sections |
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Status: | Published |
Glasgow Author(s) Enlighten ID: | Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Sinnott, Professor Richard and Asenov, Professor Asen |
Authors: | Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering University Services > IT Services > E-Science |
Publisher: | IEEE Computer Society |
ISBN: | 9781424417537 |
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