An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFET

Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G. and Asenov, A. (2008) An accurate statistical analysis of random dopant induced variability in 140,000 13nm MOSFET. In: Proceedings of the IEEE Silicon Nanoelectronics Workshop, 15-16 June 2008, Honolulu, Hawaii. IEEE Computer Society: Piscataway, N.J., USA. ISBN 9781424420711 (doi:10.1109/SNW.2008.5418478)

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Abstract

Summary form only given. In this paper, we present groundbreaking results of the simulation of 140,000 well scaled 13nm nChannel bulk MOSFETs, each microscopically different in terms of discrete dopant distributions. These devices were simulated using the well established Glasgow 3D drift/diffusion atomistic simulator. In order to undertake simulations of such a magnitude, we have employed advanced grid technology being developed at Glasgow as part of the nanoCMOS project.

Item Type:Book Sections
Status:Published
Glasgow Author(s) Enlighten ID:Sinnott, Professor Richard and Roy, Dr Gareth and Asenov, Professor Asen and Millar, Mr Cameron and Reid, Mr David and Roy, Professor Scott
Authors: Reid, D., Millar, C., Roy, G., Roy, S., Sinnott, R.O., Stewart, G., and Asenov, A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
University Services > IT Services > E-Science
Publisher:IEEE Computer Society
ISBN:9781424420711

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