Control of the third-order nonlinearities in a GaAs/AlGaAs superlattice by ion implantation quantum well intermixing

Wagner, S.J., Helmy, A.S., Aitchison, J.S., Younis, U., Holmes, B.M. and Hutchings, D.C. (2008) Control of the third-order nonlinearities in a GaAs/AlGaAs superlattice by ion implantation quantum well intermixing. In: Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008, San Jose, CA, 4-9 May 2008, pp. 1-2. ISBN 9781557528599

Abstract

Self-phase modulation was observed in GaAs/AlGaAs superlattice-core waveguides that were quantum well intermixed by ion implantation. The band gap was blue-shifted by 68 nm and the Kerr effect was suppressed by 67% after intermixing.

• Item Type: Conference Proceedings
• Additional Information: NOT IN FILE dch2y, bh35g
• Keywords: COMPACT laser diode semiconductor laser STATE
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Younis, Mr Usman and Hutchings, Professor David and Holmes, Dr Barry
• Authors: Wagner, S.J., Helmy, A.S., Aitchison, J.S., Younis, U., Holmes, B.M., and Hutchings, D.C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781557528599