Random-dopant-induced drain current variation in Nano-MOSFETs: a three-dimensional self-consistent Monte Carlo simulation study using "ab initio" ionized impurity scattering

Alexander, C., Roy, G. and Asenov, A. (2008) Random-dopant-induced drain current variation in Nano-MOSFETs: a three-dimensional self-consistent Monte Carlo simulation study using "ab initio" ionized impurity scattering. IEEE Transactions on Electron Devices, 55(11), pp. 3251-3258. (doi: 10.1109/TED.2008.2004647)

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Abstract

A comprehensive simulation study, of random-dopant-induced drain current variability is presented for a series of well-scaled n-channel MOSFETs representative of the 90-,65-, 45-, 35-, and 22-nm technology nodes. Simulations are performed at low and high drain biases using both 3-D drift diffusion (DD) and 3-D Monte Carlo (MC). The ensemble MC simulator incorporates an "ab initio" treatment of ionized impurity scattering through the real-space trajectories of the carriers in the Coulomb potential of the random discrete impurities. When compared with DD simulations, the MC simulations reveal a significant increase in the drain current variability as a result of additional transport variations due to position-dependent Coulomb scattering that is not captured within the DD mobility model. Such transport variations are in addition to the electrostatic variation in carrier density that is alone captured within the DD approach. Through comparison of the DD and MC results, we estimate the relative importance of electrostatic and transport-induced variability at different drain bias conditions.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Dr Gareth and Asenov, Professor Asen and Alexander, Dr Craig
Authors: Alexander, C., Roy, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:07 November 2008

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
421321Meeting the design challenges of the nano CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/E003125/1Electronic and Nanoscale Engineering