Quantum transport in mesoscopic semiconductor devices: Vortices, flows and atomistic effects

Barker, J.R. (2008) Quantum transport in mesoscopic semiconductor devices: Vortices, flows and atomistic effects. In: Danielewicz, P., Piecuch, P. and Zelevinsky, V. (eds.) Nuclei and Mesoscopic Physics. Series: AIP Conference Proceedings (995). American Institute of Physics: Melville, NY, pp. 104-114. ISBN 978-0-7354-0514-1

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Exciting developments in nanometer scale semiconductor MOS technology are briefly reviewed. The physics of such devices may be understood by applying 2D and 3D non-equilibrium Green function theory to their simulation. Although the current-voltage characteristics show excellent transistor behaviour the underlying transport is strictly quantum mechanical. This will be illustrated by showing the self-consistent energy resolved current flows and charge densities for typical target devices particularly double-gate MOS devices and wrap-round gate silicon nanowire MOS devices. The existence of quantized vortices even at very high temperature will be discussed and the effects of phase de-coherence. Scattering processes are particularly interesting in such devices and many novel interference phenomena and atomistic scattering effects occur including polarisation effects arising from the close proximity of source and drain and gate regions. These small devices comprise in effect finite many-body systems that are driven far from equilibrium. Each device has a different microscopic structure and environment at the atomic level and this leads to variability in the macroscopic device parameters. The full modelling of such systems is one of the major challenges to present day technology. At present the field is at a watershed where future modelling will require atomic level descriptions of the devices thus making contact with molecular electronics and novel media such as carbon nanotubes

Item Type:Book Sections
Additional Information:2nd Workshop on Nuclei and Mesoscopic Physics Michigan State Univ, NSCL, E Lansing, MI, OCT 20-22, 2007 Series ISSN: 0094-243X
Glasgow Author(s) Enlighten ID:Barker, Professor John
Authors: Barker, J.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Nuclei and Mesoscopic Physics
Publisher:American Institute of Physics

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