Capacitance fluctuations in bulk MOSFETs due to random discrete dopants

Brown, A. R. and Asenov, A. (2008) Capacitance fluctuations in bulk MOSFETs due to random discrete dopants. Journal of Computational Electronics, 7(3), pp. 115-118. (doi: 10.1007/s10825-008-0181-y)

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Abstract

Accuracy of timing in circuits and systems using nanoscale transistors is crucial and is dependent, to first order, on the capacitances of the load transistors. It is accepted that variation in parameters will be intrinsic to such devices due to, among other factors, the discrete nature of the doping. It is likely that one such parameter exhibiting variation will be capacitance. Here we investigate, using 3-dimensional simulation, the fluctuation in gate and drain capacitance in a 30 nm MOSFET due to random discrete doping.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Asenov, Professor Asen
Authors: Brown, A. R., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Computational Electronics
ISSN:1569-8025

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