Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Bukhori, M. F., Roy, S. and Asenov, A. (2008) Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. Microelectronics Reliability, 48(8-9), pp. 1549-1552. (doi: 10.1016/j.microrel.2008.06.029)

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Abstract

We present a 3D statistical simulation study of the distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nut bulk MOSFETs caused by charge trapping on stress generated defect states at the Si/SiO2 interface, taking simultaneously into account random discrete dopant in the transistors and the statistically realistic distribution of traps. The role of strategically positioned defect states and their statistical distribution in generating 'anomalously' large current and threshold voltage change in devices with microscopically different discrete doping configurations is highlighted. (C) 2008 Elsevier Ltd. All rights reserved

Item Type:Articles
Additional Information:19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Maastricht, NETHERLANDS, SEP 29-OCT 02, 2008
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Professor Scott and Asenov, Professor Asen
Authors: Bukhori, M. F., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Reliability
ISSN:0026-2714

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