Quantitative evaluation of statistical variability sources in a 45-nm-technological node LP N-MOSFET

Cathignol, A., Cheng, B., Chanemougame, D., Brown, A. R., Rochereau, K., Ghibaudo, G. and Asenov, A. (2008) Quantitative evaluation of statistical variability sources in a 45-nm-technological node LP N-MOSFET. IEEE Electron Device Letters, 29(6), pp. 609-611. (doi: 10.1109/LED.2008.922978)

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Abstract

A quantitative evaluation of the contributions of different sources of statistical variability, including the contribution from the polysilicon gate, is provided for a low-power bulk N-MOSFET corresponding to the 45-mn technology generation. This is based on a joint study including both experimental measurements and "atomistic" simulations on the same fully calibrated device. The position of the Fermi-level pinning in the polysilicon bandgap that takes place along grain boundaries was evaluated, and polysilicon-gate-gramdarity contribution was compared to the contributions of other variability sources. The simulation results indicate that random discrete dopants; are still the dominant intrinsic source of statistical variability, while the role of polysilicon-gate granularity is highly dependent on Fermi-level pinning position and, consequently, on the structure of the polysilicon-gate material and its deposition and annealing conditions

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Cheng, Dr Binjie and Asenov, Professor Asen
Authors: Cathignol, A., Cheng, B., Chanemougame, D., Brown, A. R., Rochereau, K., Ghibaudo, G., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563

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