Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown GaN micropyramids

Coquillat, D., d'Yerville, M. L. V., Kazan, M., Liu, C., Watson, I. M., Edwards, P. R., Martin, R. W., Chong, H. M. H. and De La Rue, R. M. (2008) Studies of the photonic and optical-frequency phonon properties of arrays of selectively grown GaN micropyramids. Journal of Applied Physics, 103(4), 044910. (doi:10.1063/1.2841722)

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Abstract

An array of GaN micropyramids containing a near-surface InxGa1-xN/GaN single quantum well has been fabricated using selective area epitaxial overgrowth above a patterned silica mask. The pyramid array has been studied by means of angle-resolved reflection measurements using s- and p-polarized incident light in the near- and mid-infrared optical ranges. We have found that the periodic array of flat-topped pyramids shows marked resonances in the near-infrared optical range due to resonant Bloch modes within. the extraction cone and that the angular dispersion of these modes exhibits strong photonic crystal characteristics. The experimental results are in good agreement with the photonic band structure calculated using a scattering matrix formalism. The mid-infrared optical anisotropy properties of the micropyramids were investigated to probe the infrared active phonons of the pyramid array. The A(1)(LO) phonon of the InxGa1-xN/GaN single quantum well was identified and the InN mole fraction was estimated from the mode behavior.

Item Type:Articles
Keywords:BAND-STRUCTURE CRYSTAL SLABS DISPERSION EPILAYERS LIGHT photonic crystal REFLECTION SCATTERING
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Chong, Dr Harold and De La Rue, Professor Richard
Authors: Coquillat, D., d'Yerville, M. L. V., Kazan, M., Liu, C., Watson, I. M., Edwards, P. R., Martin, R. W., Chong, H. M. H., and De La Rue, R. M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979

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