Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist

Gnan, M., Thoms, S. , Macintyre, D. S., De La Rue, R. M. and Sorel, M. (2008) Fabrication of low-loss photonic wires in silicon-on-insulator using hydrogen silsesquioxane electron-beam resist. Electronics Letters, 44(2), pp. 115-116. (doi:10.1049/el:20082985)

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Abstract

Fully etched photonic wires in silicon-on-insulator have been fabricated and propagation loss values as low as 0.92 +/- 0.14 dB/cm have been obtained. Hydrogen silsesquioxane (HSQ) was used as an electron beam resist and as a direct mask in the dry-etch processing of the silicon core layer. The dimensional repeatability of the fabrication process was also estimated through measurements of the wavelength selection performance of nominally identical photonic wire Bragg gratings fabricated at intervals over a period of 37 days

Item Type:Articles
Keywords:FABRICATION photonic wires PROPAGATION silicon SILICON-ON-INSULATOR wires
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Macintyre, Dr Douglas and De La Rue, Professor Richard and Thoms, Dr Stephen and Sorel, Professor Marc
Authors: Gnan, M., Thoms, S., Macintyre, D. S., De La Rue, R. M., and Sorel, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:The Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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