Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET

Hamid, N.H., Murray, A. E. and Roy, S. (2008) Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET. IEEE Transactions on Circuits and Systems I: Regular Papers, 55(1), pp. 233-245. (doi: 10.1109/TCSI.2007.910543)

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Abstract

1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency. noise as the MOSFET enters the nanoscale regime. In this study, 1/f noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models 1/f noise while a Monte Carlo based technique is used to generate RTS noise. Low-frequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35-mu m and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of low-frequency noise on the operation of deep-submicrometer analog integrated circuits

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Professor Scott
Authors: Hamid, N.H., Murray, A. E., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Circuits and Systems I: Regular Papers
Publisher:IEEE
ISSN:1549-8328

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