NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs

Kalna, K., Martinez, A., Svizhenko, A., Anantram, M. P., Barker, J. R. and Asenov, A. (2008) NEGF Simulations of the effect of strain on scaled double gate NanoMOSFETs. Journal of Computational Electronics, 7(3), pp. 288-292. (doi: 10.1007/s10825-008-0212-8)

Abstract

The effect of biaxial strain on double gate (DG) nanoscaled Si MOSFET with channel lengths in the nanometre range is investigated using Non-Equilibrium Green’s Functions (NEGF) simulations. We have employed fully 2D NEGF simulations in order to answer the question at which body thickness the effects of strain is masked by the confinement impact. Following ITRS, we start with a 14 nm gate length DG MOSFET having a body thickness of 9 nm scaling the transistors to gate lengths of 10, 6 and 4 nm and body thicknesses of 6.1, 2.6 and 1.3 nm. The simulated I D–V G characteristics show a 6% improvement in the on-current for the 14 nm gate length transistor mainly due to the energy separation of the Δ valleys. The strain effect separates the 2 fold from the 4 fold valleys thus keeping mostly operational transverse electron effective mass in the transport direction. However, in the device with an extreme body thickness of 1.3 nm, the strain effect has no more impact on the DG performance because the strong confinement itself produces a large energy separation of valleys.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Barker, Professor John and Asenov, Professor Asen and Kalna, Dr Karol and Martinez, Dr Antonio
• Authors: Kalna, K., Martinez, A., Svizhenko, A., Anantram, M. P., Barker, J. R., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Computational Electronics
• ISSN: 1569-8025