Elemental profiling of III-V MOSFET high-k dielectric gate stacks using EELS spectrum imaging

Longo, P., Craven, A.J., Scott, J. , Holland, M. and Thayne, I.G. (2008) Elemental profiling of III-V MOSFET high-k dielectric gate stacks using EELS spectrum imaging. In: Cullis, A.G. and Midgley, P.A. (eds.) Microscopy of Semiconducting Materials 2007. Series: Springer Proceedings in Physics (120). Springer-Verlag: Berlin, Germany, pp. 317-320. ISBN 9781402086144

Abstract

In this paper a quantitative determination of the elemental distribution across a GaAs/Ga2O3/GGO dielectric gate stack is presented and the analysis discussed. The EELS spectrum imaging technique is described and the data analysis discussed.

• Item Type: Book Sections
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Longo, Dr Paolo and Scott, Dr Jamie and Craven, Professor Alan and Holland, Dr Martin
• Authors: Longo, P., Craven, A.J., Scott, J., Holland, M., and Thayne, I.G.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Physics and Astronomy; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Microscopy of Semiconducting Materials 2007
• Publisher: Springer-Verlag
• ISSN: 0930-8989
• ISBN: 9781402086144