Elemental profiling of III-V MOSFET high-k dielectric gate stacks using EELS spectrum imaging

Longo, P., Craven, A.J., Scott, J. , Holland, M. and Thayne, I.G. (2008) Elemental profiling of III-V MOSFET high-k dielectric gate stacks using EELS spectrum imaging. In: Cullis, A.G. and Midgley, P.A. (eds.) Microscopy of Semiconducting Materials 2007. Series: Springer Proceedings in Physics (120). Springer-Verlag: Berlin, Germany, pp. 317-320. ISBN 9781402086144

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Abstract

In this paper a quantitative determination of the elemental distribution across a GaAs/Ga2O3/GGO dielectric gate stack is presented and the analysis discussed. The EELS spectrum imaging technique is described and the data analysis discussed.

Item Type:Book Sections
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Scott, Dr Jamie and Craven, Professor Alan and Longo, Dr Paolo and Thayne, Professor Iain and Holland, Dr Martin
Authors: Longo, P., Craven, A.J., Scott, J., Holland, M., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Physics and Astronomy
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microscopy of Semiconducting Materials 2007
Publisher:Springer-Verlag
ISSN:0930-8989
ISBN:9781402086144

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