Si-Sio(2) interface band-gap transition - effects on MOS inversion layer

Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L. and Asenov, A. (2008) Si-Sio(2) interface band-gap transition - effects on MOS inversion layer. Physica Status Solidi A: Applications and Materials Science, 205(6), pp. 1290-1295. (doi:10.1002/pssa.200778154)

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Publisher's URL: http://dx.doi.org/10.1002/pssa.200778154

Abstract

Density functional theory simulation results of the atomic structure at the Si-SiO2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 angstrom, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrodinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide -semiconductor structure.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Roy, Professor Scott and Asenov, Professor Asen
Authors: Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physica Status Solidi A: Applications and Materials Science
Publisher:Wiley - V C H Verlag GmbH & Co. KGaA
ISSN:1862-6300
ISSN (Online):1862-6319

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
368421Meeting the materials challenges of nano-CMOS electronicsAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)GR/S80097/01Electronic and Nanoscale Engineering