Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain - art. no. 012026

Martinez, A., Barker, J. R., Bescond, M., Brown, A. R. and Asenov, A. (2008) Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain - art. no. 012026. In: Goodnick, S.M. and Ferry, D.K. (eds.) International Symposium on Advanced Nanodevices and Nanotechnology. Series: Journal of Physics Conference Series (109). IOP Publishing: Bristol, p. 12026. ISBN 1742-6588

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Abstract

A recently developed 3D self-consistent Non-equilibrium Green Function technique is used to study technologically identical silicon wrap-round gate 3D nanowire devices each of which has a different atomistically-resolved spatial distribution of dopants in the source and drain but in the absence of inhomogeneities in the channel/oxide interface and for an undoped channel. The simulations broadly confirm the conclusions of an earlier theoretical study of granularity effects on drive current that was limited by being two-dimensional and used a strongly inhomogeneous but continuum model of the doping profile in source and drain. However, the 3D nature of the flows makes it easier for charge to re-distribute around the regions of strong attractive potential. The stronger inhomogeneity effects in current density and charge density and the large inter-device variability predicted by 2D models are therefore over-estimates

Item Type:Book Sections
Additional Information:1st International Symposium on Advanced Nanodevices and Nanotechnology, Waikoloa, HI, DEC 01, 2007-DEC 07, 2008
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Barker, J. R., Bescond, M., Brown, A. R., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:International Symposium on Advanced Nanodevices and Nanotechnology
Publisher:IOP Publishing
ISSN:1742-6588
ISBN:1742-6588

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