A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor

Martinez, A., Bescond, M., Brown, A., Barker, J. R. and Asenov, A. (2008) A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor. Journal of Computational Electronics, 7(3), pp. 359-362. (doi: 10.1007/s10825-008-0240-4)

Abstract

The effect of the location of a negative stray charge associated with an acceptor type defect state in the channel of a nanowire transistor has been investigated using a Non Equilibrium Green’s Function Formalism in the effective mass approximation. Due to the fact that the nanowire cross-section is 2.2×2.2 nm2, we have calculated the effective masses using Tight Binding (TB) calculations. A third neighbor sp 3 TB model has been used. We have found that the on current is two time smaller when the charge is located in the source end as compared to its location in the drain end. We have also studied the effect on the current of the spatial distribution of the acceptor charge. The calculations show that when the charge is more distributed (de-localized) the effect of the blocking of the current is less efficient, so the current is higher.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Barker, Professor John and Brown, Mr Andrew and Asenov, Professor Asen and Martinez, Dr Antonio
• Authors: Martinez, A., Bescond, M., Brown, A., Barker, J. R., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Computational Electronics
• ISSN: 1569-8025