Milgrew, M. J. and Cumming, D. R. S. (2008) Matching the transconductance characteristics of CMOS ISFET arrays by removing trapped charge. IEEE Transactions on Electron Devices, 55(4), pp. 1074-1079. (doi: 10.1109/TED.2008.916680)
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Publisher's URL: http:/dx.doi.org/10.1109/TED.2008.916680
Abstract
This paper presents an approach for matching the transconductance characteristics of CMOS ISFET arrays by removing trapped charge. We describe how to design arrays of floating-gate ISFETs so that ultraviolet (UV) radiation and bulk-substrate biasing can be used to remove the random amount of trapped charge that accumulates on the gates during fabrication. The approach is applied directly to a prototype single-chip 2 x 2 array of ISFETs, which is designed and fabricated in a standard 0.35-mu m CMOS process. By considering the transconductance characteristics of the 2 x 2 array before and after UV exposure, it is shown that the response can be matched after 10 h and that the ISFET threshold voltages converge to an equilibrium value of approximately -1 V. After matching, it is found that the ISFET array has a measured sensitivity of 46 mV/pH and can successfully image a change in the pH of a homogeneous electrolyte solution
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Milgrew, Dr Mark |
Authors: | Milgrew, M. J., and Cumming, D. R. S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Transactions on Electron Devices |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0018-9383 |
Published Online: | 21 March 2008 |
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