Accurate statistical description of random dopant-induced threshold voltage variability

Millar, C., Reid, D., Roy, G., Roy, S. and Asenov, A. (2008) Accurate statistical description of random dopant-induced threshold voltage variability. IEEE Electron Device Letters, 29(8), pp. 946-948. (doi: 10.1109/LED.2008.2001030)

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Publisher's URL: http://dx.doi.org/10.1109/LED.2008.2001030

Abstract

We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET in the presence of random discrete dopants. A ground-breaking sample of 100 000 transistors with statistically unique random dopant distributions were simulated using the Glasgow 3-D device simulator and advanced grid computing technologies. The results indicate that the threshold voltage distribution deviates substantially from a Gaussian distribution, which may have significant implications for the margins used in circuit design, particularly in SRAM cells

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Dr Campbell and Roy, Dr Gareth and Asenov, Professor Asen and Reid, Mr David and Roy, Professor Scott
Authors: Millar, C., Reid, D., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):1558-0563

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