Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors

Oxland, R.K. and Rahman, F. (2008) Fluid phase passivation and polymer encapsulation of InP/InGaAs heterojunction bipolar transistors. Semiconductor Science and Technology, 23(8), 085020. (doi:10.1088/0268-1242/23/8/085020)

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Publisher's URL: http://dx.doi.org/10.1088/0268-1242/23/8/085020


This paper reports on the development of effective passivation techniques for improving and stabilizing the characteristics of InP/InGaAs heterojunction bipolar transistors. Two different methods for carrying out sulfur-based surface passivations are compared. These include exposure to gaseous hydrogen sulfide and immersion treatment in an ammonium sulfide solution. The temporal behaviour of effects resulting from such passivation treatments is reported. It is shown that liquid phase passivation has a larger beneficial effect on device performance than gas phase passivation. This is explained in terms of the polarity of passivating species and the exposed semiconductor surface. Finally, device encapsulation in a novel chalcogenide polymer is shown to be effective in preserving the benefits of surface passivation treatments. The relevant properties of this encapsulation material are also discussed

Item Type:Articles
Keywords:Adsorption, device, hydrogen-sulfide, silicon-nitride, sulphur, surface passivation
Glasgow Author(s) Enlighten ID:Rahman, Dr Faiz and Oxland, Dr Richard
Authors: Oxland, R.K., and Rahman, F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Journal Abbr.:Semicond. sci. technol.

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